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How to Cite | Author Information | Publication History | Funding Information
International Journal of Metallurgical & Materials Engineering Volume 3 (2017), Article ID 3:IJMME-138, 5 pages
http://dx.doi.org/10.15344/2455-2372/2017/138
Research Article
Novel Graphene-Silicon Heterostructure Device with a Gate-Controlled Schottky Barrier

Pengfei Zhang, Beibei Guo and Dongyun Wan*

School of Materials Science and Engineering, Shanghai University, Shanghai, China
Dr. Dongyun Wan, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China; E-mail: wandy@mail.sic.ac.cn
22 November 2017; 27 December 2017; 29 December 2017
Zhang P, Guo B, Wan D (2017) Reactive Oxygen Species in Novel Hydrometallurgical Processes. Int J Metall Mater Eng 3: 138. doi: https://doi.org/10.15344/2455-2372/2017/138
The work was supported by the jointed foundation from National Natural Science Foundation of China and the big science facility of Chinese Academy of Sciences (No. U1632108).
© 2017 Zhang et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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