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International Journal of Metallurgical & Materials Engineering Volume 1 (2015), Article ID 1:IJMME-111, 3 pages
http://dx.doi.org/10.15344/2455-2372/2015/111
Research Article
Pentacene Thin-Film Transistors with Hydrophobic Nanostructures on a Polymeric Gate Insulator

Jae-Hoon Kim1, You-Jin Lee1 and Jaehoon Park2*

1Department of Information Display Engineering, Hanyang University, Seoul133-791, Korea
2Department of Electronic Engineering, Hallym University, Chuncheon 200-702, Korea
Prof. Jaehoon Park, Department of Electronic Engineering, Hallym University, Chuncheon, 200-702, Korea; E-mail: jaypark@hallym.ac.kr
02 May 2015; 03 August 2015; 05 August 2015
Kim JH, Lee YJ, Park J (2015) Pentacene Thin-Film Transistors with Hydrophobic Nanostructures on a Polymeric Gate Insulator. Int J Metall Mater Eng 1: 111. doi: http://dx.doi.org/10.15344/2455-2372/2015/111
This work was supported by the Basic Science Research Programs through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2014R1A1A2057057).

Abstract

The effects of hydrophobic nanostructures on the growth of pentacene molecules and the electrical characteristics of pentacene thin-film transistors (TFTs) are investigated. X-ray diffraction results show that hydrophobic nanostructures are conducive to the upright growth of pentacene molecules to the substrate. Pentacene TFTs, in which hydrophobic nanostructures with a cowl shape were introduced at the interface between the pentacene layer and the gate insulator, thus exhibit a pronounced enhancement in the field-effect mobility, up to approximately 2.94 cm2/Vs. These results suggest that hydrophobic nanostructures are effective to the ordered growth of pentacene molecules for high-performance organic TFTs.